Nanotechnologies for ICTs

Expected knowledge: • development of knowledge that extends and/or reinforces the ones received from preparatory courses (specifically for the technological contents) and allow to mature and/or apply original ideas and design methods to the development of a new technological process flow for the production of integrated circuits, additive manufactured systems, MEMS and microsystems; • knowledge of the physical-chemical behaviour of materials to be used in micro and nanotechnologies. • knowledge of the advanced technologies for microlectronics, additive manufactured systems, MEMS and microstructures fabrication. • knowledge of materials for microlectronics, additive manufactured systems, MEMS and microstructures fabrication. • knowledge of techniques and issues related to the fabrication and verification of nanosystems. • knowledge of the different readout mechanisms, layouts and architectural solutions related to the fabrication and verification of MEMS. • knowledge of the impact of environmental conditions on the performance of MEMS. Expected competences and skills • ability to identify and select the most suited and to apply materials and technologies for the fabrication of microlectronics, additive manufactured systems, MEMS and microstructures. • ability to identify and select the most suited and to apply readout mechanisms, layouts and architectural solutions for the implementation of MEMS and microsystems. • ability to apply the acquired knowledge in a research and/or industrial framework, applying capability and skills in solving problems related to the design, simulation and implementation of microlectronics, additive manufactured systems, MEMS and microstructures, also in the case of new or unfamiliar issues or entered into broader and more interdisciplinary application contexts than the pure engineering sector (medicine, environmental monitoring, food, ...); • ability to integrate technical knowledge and to manage the complexity of the design, economics and manufacturing process flow, to evaluate the quality and robustness of a process flow, its implementation and feasibility, choosing the most efficient solutions from the available options; • ability to communicate in a clear and unambiguous way technical aspects related to the design and manufacture of microlectronics, additive manufactured systems, MEMS and microstructures, both in writing and oral form and to both specialists and non-specialists; • development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies and fabrication techniques for microlectronics, additive manufactured systems, MEMS and microstructures, not necessarily explained and described during the course.

The deepening on technologies at the micro and nano-scale is the basis for the design and manufacture of microelectronic devices, power and high temperature electronics, MEMS/NEMS, microsensors, microfluidics and for the conception of new nanostructured and additively manufactured devices/systems. Technological processes therefore represent a fundamental know-how for both the electronic and the nanotechnology engineer. In this framework, the "Advanced Technologies and Applications" course is conceived as a follow-up of the course "Physics of technological processes" (1st semester), which, as a consequence, is absolutely strongly preparatory. The course provides the theoretical and practical (through examples from the state-of-the-art of the technological market) foundation for the study of materials, advanced technologies and design solutions for the manufacturing of microelectronic devices, micro and nanostructures, microsystems and MEMS/NEMS, with particular emphasis on applications in the ICT area. To this aim, the course is divided into two separate modules: 1) in the first module an overview of different readout mechanisms, layout and architectural solutions for MEMS devices as a function of the specific application is given, so as to provide the student with the minimal tools allowing him evaluating the best suited combination for different devices and applications. Different examples of MEMS and microsystems devices are treated and discussed, thus making the course specifically addressed to those students interested in the application of fabrication and design aspects to micro and nano-scale devices. 2) in the second module particular emphasis will be devoted to provide a comprehensive overview of the state-of-the-art of micro and nano-scale processes (advanced lithography, laser micromachining, advanced packaging, additive manufacturing, …) and to provide the student with the minimal tools to allow him evaluating different materials and different technological processes so as to select the best suited combination for different devices and applications. This course plays a central role in the development of an Engineer expert in micro and nanotechnologies, since it extensively provides the advanced elements for the fabrication and design of the above mentioned devices and it is complementary for the understanding of the other courses of the Master Degree.

First module – MEMS devices (23 hours): • Micro pressure sensors (2,5 hrs) • Micro accelerometers (2 hrs) • Acoustic sensors (3 hrs) • Flow sensors (1 hr) • Microfluidic devices (4 hrs) • Chemical sensors (1,5 hrs) • Biosensors (1,5 hrs) • MEMS for biomedical applications (2 hrs) • MEMS for genomic applications (2,5 hrs) • MEMS testing (3 hrs) Second module – Advanced technologies (37 hours): • Advanced lithographies: projection systems, photoresists and photomasks, DUV, immersion lithography, multiple patterning, EUV, Resolution Enhancement Techniques (11,5 hrs) • Polymeric Additive Manufacturing: overview, advantages and challenges, materials and techniques (SLS, FDM, SLA, DLP, CLIP, 2PP, LOM, 3DP, AJP, …), composite materials, volumetric 3D printing, 4D printing, applications (11,5 hrs) • Laser Micromachining: sources, technologies and applications (9 hrs) • Advanced Packaging (6 hrs) No distinction to be reported for the content of the course according to the fact that it will be carried out in presence or remotely.

Modalita di esame: Prova scritta (in aula);
Exam: Written test;
... Expected learning outcomes Understanding of the covered topics and ability to grasp the fundamental aspects of the various technologies, devices and related characteristics, fabrication technologies and materials. Ability to compare (advantages/disadvantages) the different technological tools for the manufacture of a device or a complex multifunctional system. Ability to compare (advantages/disadvantages) the different readout mechanisms for the implementation of a specific sensing (or actuating) MEMS device. Ability to compare, identify and logically use the best readout mechanism, architecture, layout solutions and technological tools in order to optimize the performance (sensitivity, linearity range, robustness, ...) of a MEMS device. Ability to compare, identify and logically use the best technological tools or the best set of technological parameters in order to optimize the manufacturing process of a device, the yield of a process or other suggested requirements for the specific addressed needs. Ability to build a logical path by assembling the various technological processes, for the construction of a micro and nano-scale device. Criteria, rules and procedures for the examination The exam is aimed at ascertaining the knowledge of the topics listed in the official program of the course and the ability to apply the theoretical contents for the solution of simple exercises and problems (for instance related to the solution and optimization of lithographic processes or for the implementation of MEMS devices). The exam involves a written proof including both multiple-answer questions and open questions and short exercises. The total allotted time is 60 mins. No books, notes or any other didactic material is allowed. No negative points for the wrong multiple-answer questions, while missing answers will be considered as "0 points" on the cumulative result of the final mark. The assessments are expressed in thirtieths and the exam is passed if the mark is at least 18/30. The maximum achievable mark is 30 cum laude. The type of proposed questions aims to test the student ability to understand and revision the topics covered in class lectures, with particular reference to the ability to compare similar technologies, compare results or processing parameters of technological processes or performance of different materials and compare devices, readout mechanisms, architectural and layout solutions, results or processing parameters of technological processes or performance of different materials for the implementation of MEMS devices and microsensors. The main evaluation criteria of the exam consist in the correctness of the tests and problems solutions, the completeness and synthesis of the responses to the open questions and the correctness of the employed technical language. The exam results are communicated directly to students at the end of the written exam revision by the teacher.

The didactic material (slides for the lectures) will be distributed in pdf format by the teacher and uploaded on the Didactic Portal before the course start. All the lectures will be moreover recorded and related videos made available on the Didactic Portal. Suggested but not mandatory additive readings and books will be specified by the teacher. Among them: - “Microsystem Technology�, W. Menz, J. Mohr, O.Paul, Wiley-VCH ed. - “Field guide to optical lithography�, Chris A. Mack, SPIE Press - “Microlithography - Science and Technology�, Third Edition, Edited by Bruce W. Smith and Kazuaki Suzuki, CRC Press

Advanced microsystems and LABSExpected knowledge: • development of knowledge that extends and/or reinforces the ones received from preparatory courses and allow to develop and/or apply original ideas and design methods and the development of a technological process flow for the production of integrated circuits and microsystems; • ability to apply the knowledge gained in a research and/or industrial framework, understanding capability and skills in solving problems related to the design, simulation and implementation of microelectronic circuits and microsystems also applied to new or unfamiliar issues or entered into application contexts broader and more interdisciplinary than the engineering sector (medicine, environmental monitoring, food, ...); • ability to integrate technical knowledge and to manage the complexity of the design and manufacturing process flow, to evaluate the quality and robustness of a process flow, its implementation and feasibility, choosing the most efficient solutions from the available options; • ability to communicate in a clear and unambiguous way technical aspects relating to the design and manufacture of integrated circuits and microsystems, both in writing and oral form and to both specialists and non-specialists; • development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies and fabrication techniques for integrated circuits and microsystems, not necessarily explained and described during the course. Expected skills • Knowledge of the physical-chemical behaviour of materials to be used in micro and nanotechnologies. • Knowledge of the basic technologies for microstructure realization. • Knowledge of materials and technologies for Microsystems and MEMS realization. • Ability to apply materials and technologies for realization of microstructure and microsystems. • Knowledge of techniques and issues related to the fabrication and verification of nanosystems.Advanced microsystems and LABS (Microsystems II)Expected knowledge: • development of knowledge that extends and/or reinforces the ones received from preparatory courses and allow to develop and/or apply original ideas and design methods and the development of a technological process flow for the production of integrated circuits and microsystems; • ability to apply the knowledge gained in a research and/or industrial framework, understanding capability and skills in solving problems related to the design, simulation and implementation of microelectronic circuits and microsystems also applied to new or unfamiliar issues or entered into application contexts broader and more interdisciplinary than the engineering sector (medicine, environmental monitoring, food, ...); • ability to integrate technical knowledge and to manage the complexity of the design and manufacturing process flow, to evaluate the quality and robustness of a process flow, its implementation and feasibility, choosing the most efficient solutions from the available options; • ability to communicate in a clear and unambiguous way technical aspects relating to the design and manufacture of integrated circuits and microsystems, both in writing and oral form and to both specialists and non-specialists; • development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies and fabrication techniques for integrated circuits and microsystems, not necessarily explained and described during the course. Expected skills • Knowledge of the physical-chemical behaviour of materials to be used in micro and nanotechnologies. • Knowledge of the basic technologies for microstructure realization. • Knowledge of materials and technologies for Microsystems and MEMS realization. • Ability to apply materials and technologies for realization of microstructure and microsystems. • Knowledge of techniques and issues related to the fabrication and verification of nanosystems.

Advanced microsystems and LABSThe course is taught in English. Aim of the course (1st semester, 1st year of the International LM in Nanotechnologies for ICT) is to provide the theoretical basics to be exploited in the study of materials, technologies and design for realization of microelectronic devices, micro and nanostructures, microsystems and MEMS/NEMS (micro/nano-electro-mechanical systems), with particular emphasis on applications in the ICT area. This course plays a central role in the development of an Engineer expert in micro an nanotechnologies, because it extensively provides the basic elements for the fabrication and design of the above mentioned devices and it is preparatory for the understanding of subsequent courses of the Laurea Magistrale. In the course the fundamentals of technologies and material for microelectronics and microsystems and some examples of the same are treated and discussed, thus making the course specifically addressed to those students interested in the fabrication and design aspects of micro and nano-scale devices.Advanced microsystems and LABS (Microsystems II)The course is taught in English. Aim of the course (1st semester, 1st year of the International LM in Nanotechnologies for ICT) is to provide the theoretical basics to be exploited in the study of materials, technologies and design for realization of microelectronic devices, micro and nanostructures, microsystems and MEMS/NEMS (micro/nano-electro-mechanical systems), with particular emphasis on applications in the ICT area. This course plays a central role in the development of an Engineer expert in micro an nanotechnologies, because it extensively provides the basic elements for the fabrication and design of the above mentioned devices and it is preparatory for the understanding of subsequent courses of the Laurea Magistrale. In the course the fundamentals of technologies and material for microelectronics and microsystems and some examples of the same are treated and discussed, thus making the course specifically addressed to those students interested in the fabrication and design aspects of micro and nano-scale devices.

Advanced microsystems and LABSIntegrated Circuits technologies (wafer preparation, cleanroom technology, silicon oxidation, epitaxy, CVD, evaporation, sputtering, electroplating, diffusion, ion implantation) (2 ECTS) Lithographic techniques, wet etching, dry etching, back-end technologies, CMOS process flow (2 ECTS) Introduction to MEMS and NEMS, bulk micromachining, surface micromachining, LIGA, wafer bonding, MEMS packaging, MEMS complementary technologies (2 ECTS)Advanced microsystems and LABS (Microsystems II)Integrated Circuits technologies (wafer preparation, cleanroom technology, silicon oxidation, epitaxy, CVD, evaporation, sputtering, electroplating, diffusion, ion implantation) (2 ECTS) Lithographic techniques, wet etching, dry etching, back-end technologies, CMOS process flow (2 ECTS) Introduction to MEMS and NEMS, bulk micromachining, surface micromachining, LIGA, wafer bonding, MEMS packaging, MEMS complementary technologies (2 ECTS)

Advanced microsystems and LABSModalita di esame: Prova scritta (in aula); Advanced microsystems and LABS (Microsystems II)Modalita di esame: Prova scritta (in aula);
Advanced microsystems and LABSExam: Written test; Advanced microsystems and LABS (Microsystems II)Exam: Written test;
... Advanced microsystems and LABSThe exam involves a written proof including both multiple-answer questions and open questions and short exercises. The total allotted time is 60 mins. The type of proposed questions aims to test the student ability to understand and revision the topics covered in class lectures, with particular reference to the ability to compare similar technologies, compare results or processing parameters of technological processes or performance of different materials. The main evaluation criteria of the exam consist in the correctness of the tests solutions, the completeness and synthesis of the responses to the open questions and the correctness of the employed technical language.Advanced microsystems and LABS (Microsystems II)The exam involves a written proof including both multiple-answer questions and open questions and short exercises. The total allotted time is 60 mins. The type of proposed questions aims to test the student ability to understand and revision the topics covered in class lectures, with particular reference to the ability to compare similar technologies, compare results or processing parameters of technological processes or performance of different materials. The main evaluation criteria of the exam consist in the correctness of the tests solutions, the completeness and synthesis of the responses to the open questions and the correctness of the employed technical language.

Advanced microsystems and LABSThe didactic material (slides for the lectures) will be distributed by teachers. Suggested but not mandatory books will be specified by the teacher. Among them: - “Microsystem Technology�, W. Menz, J. Mohr, O.Paul, Wiley-VCH ed. Advanced microsystems and LABS (Microsystems II)The didactic material (slides for the lectures) will be distributed by teachers. Suggested but not mandatory books will be specified by the teacher. Among them: - “Microsystem Technology�, W. Menz, J. Mohr, O.Paul, Wiley-VCH ed.

Knowledge of elements of crystal structure. Knowledge of alternative approaches to the theoretical determination of the energy bands in semiconductors. Knowledge of scattering mechanisms in semiclassical theory of charge transport. Knowledge of the electronic and transport properties of polymeric and organic materials. Ability to use the empirical pseudopotential method to compute the electronic structure of crystalline semiconductors. Ability to solve the Boltzmann transport equation by means of a Monte Carlo particle-based approach. Ability to understand and analyze/design polymeric and organic (opto)electronic devices.

Aim of the course is to present the theoretical foundations of electronic properties of materials, including polymeric and organic semiconductors, with particular emphasis on applications in the area of ICTs. This course plays a critical role in the development of an Engineer expert in Nanotechnologies, because it provides the elements for understanding the properties of semiconductors - both bulk and nanostructured - and prepares students for courses in quantum electronics.

Review of the crystal, electronic and transport properties of semiconductor materials and their alloys and heterostructures. Introduction to the empirical and ab initio approaches to the computation of the electronic structure of semiconductors. Details on the use of the empirical pseudopotential method for the approximation of the electronic structure of crystalline semiconductors (1 ECTS). Scattering theory: impurity scattering, carrier-phonon scattering, impact ionization scattering, radiative processes. Carrier transport in semiconductors, the Boltzmann transport equation, particle-based device simulation methods, the Monte Carlo approach (3.7 ECTS). The numerical solution of the drift-diffusion equations (0.3 ECTS). Electronic properties of amorphous and crystalline polymers, conjugated polymers, organic conductors and semiconductors. Transport properties of organic semiconductors. Introduction to organic and polymeric based electronic devices. Inkjet printing technology of polymers (1 ECTS).

Detailed week-by-week syllabus, lecture notes, and laboratory/homework assignments will be posted on the course website. Supplementary texts include: M. Fischetti and W. G. Vandenberghe, Advanced Physics of Electron Transport in Semiconductors and Nanostructures, Springer 2016. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, ser. Computational Microelectronics, Springer 1989. D. Vasileska, S. M. Goodnick, and G. Klimeck, Computational Electronics. Semiclassical and Quantum Device Modeling and Simulation, CRC Press 2010. Ioannis Kymissis, Organic Field Effect Transistors: Theory, Fabrication and Characterization, Springer 2009.

By the end of the course, students will be able to identify and classify Ordinary Differential Equations (ODEs) and Partial Differential Equations (PDEs) underlying mathematical models of engineering problems, and they will acquire foundational knowledge of finite difference and finite element methods for solving such equations. In addition, students will develop the skills to design and implement efficient numerical methods for ODE/PDE-based engineering problems using Matlab.

Il corso è tenuto in inglese. Il corso introduce i metodi numerici per la risoluzione di equazioni differenziali ordinarie e alle derivate parziali, affrontando sia gli aspetti teorici sia quelli applicativi. L'obiettivo principale è fornire agli studenti le conoscenze e le competenze pratiche necessarie per eseguire simulazioni numeriche efficienti di problemi classici dell’ingegneria, una competenza essenziale per corsi avanzati e per progetti di laurea magistrale. Un aspetto centrale del corso è quello di fornire agli studenti una solida conoscenza delle metodologie nel calcolo numerico e addestrarli all’uso del software Matlab, affinché siano in grado di risolvere numericamente, con l'ausilio del calcolatore, alcuni problemi che comunemente si presentano nelle applicazioni dell’ingegneria. In particolare, tali conoscenze consentono agli studenti di individuare tra i metodi a loro disposizione quello più efficiente, sia in termini di complessità computazionale che di occupazione di memoria, per la risoluzione di un determinato problema, e di fare un’analisi critica della soluzione ottenuta. Questa capacità è particolarmente importante per gli ingegneri chimici che si troveranno a utilizzare codici commerciali per risolvere problemi complessi, come ad esempio quelli connessi con i processi di trasformazione dei materiali. Infatti, grazie a questo insegnamento, gli studenti acquisiscono le competenze matematiche necessarie per evitare risultati non attendibili o comunque poco accurati, che potrebbero derivare da scelte non adeguate degli algoritmi.

INTRODUCTION (4 hours) Lectures: Generalities on ordinary and partial differential equations. Examples of classical differential problems, in particular with reference to the chemical engineering ones. Stationary problems, eigenvalue problems and evolution problems. Classification of second order equations. Initial-value and boundary-value problems. Strong and weak solutions. FEM FOR LINEAR STATIONARY PROBLEMS (40 hours) Lectures and problem sessions (28 hours): • The Finite Element Method (FEM) for second order linear elliptic problems defined on bounded intervals or on bounded plane domains. • Sobolev spaces and weak formulations of differential problems. Integration by parts and Green’s formulas. • Problem space domain discretization. Finite elements and finite element spaces. Definitions and examples. Some main results on approximation theory. • Application of the FEM to linear elliptic problems, first defined on bounded intervals, and then on bounded plane domains, with different types of boundary conditions (Dirichlet, Neumann, Robin, mixed-type, of periodicity). • Some basic convergence results. • Eigenvalue problems. • Construction of the FEM stiffness matrix and solution of the associated linear system. • Numerical integration formulas. Conditioning of a linear system. Basic methods for the numerical solution of linear systems. Computer Lab sessions (12 hours) FEM FOR LINEAR TIME-DEPENDENT PROBLEMS (16 hours) Lectures and problem sessions (10 hours): • Weak formulations in the space domain of parabolic and hyperbolic problems, in particular of transport and wave propagation problems. Application of the FEM. • Basic on initial value ODE problems. • Finite difference schemes for the time discretization of ODE systems generated after performing the (space) FEM discretization. Computer Lab sessions (6 hours) NUMERICAL METHODS FOR ODE INITIAL-VALUE PROBLEMS (IVP) (10 hours) Lectures and problem sessions (7 hours): • One-step methods and convergence results for the solution of IVP-ODEs. • Stiff problems and numerical methods for their resolution. Computer Lab sessions (3 hours) FINITE DIFFERENCE METHODS FOR PDE BOUNDARY-VALUE PROBLEMS (BVP) (10 hours) Lectures and problem sessions (7 hours): • Finite difference methods for elliptic, parabolic and hyperbolic BVP-PDEs. • Stability and convergence results. • Reaction-diffusion-transport problems and numerical stabilization for transport dominating ones. Computer Lab sessions (3 hours)

Modalita di esame: Test informatizzato in laboratorio; Prova scritta (in aula);
Exam: Computer lab-based test; Written test;
... The exam consists of two tests: the first is an computer test, the second is a written test. The first test, to be held in the computer Lab, consists of 4 multiple-choice questions concerning the course topics. In this test students must show to be able to solve, by applying the numerical methods described in the lectures and by preparing short Matlab scripts, problems similar to those that have been solved during the Lab course sections. This to verify the students’ knowledge of the algorithms presented during the course and their programming and computing skills. Students must use the Matlab software installed in the Lab PC, and they are not allowed to use books, notes, personal PC and any electronic device. The maximum grade is 16 points: each correct answer is worth 4 points, an unanswered question is worth 0 points, and an incorrect answer results in a 20% penalty. The Lab test is scheduled for about an hour and a half. The second written test, to be held in a lecture room the same day of the Matlab test, consists of two/three exercises that include both practical and theoretical questions, covering the entire course content. The written test is scheduled for about an hour and a half and is worth up to 16 points. During the exam, it is forbidden to use books, personal material such as notes and handouts and any electronic device. The final grade is the total of the two test scores. A minimum score of 18 is required to pass, while full marks with all correct answers are awarded with honors (cum laude).

Lecture notes, as well as notes on the computer lab sessions, can be downloaded by the students from the Portale della Didattica. Further reading: A. Quarteroni, Numerical Models for Differential Problems, Springer Verlag, 2009. A. Quarteroni, F. Saleri, P. Gervasio, Scientific Computing with MATLAB and OCTAVE, Springer, 2014.

The knowledge transmitted by the course to students involves: - Physical and chemical properties of functional materials involved in micro and nanotechnologies. - Characterization methods devoted to materials, micro/nanostructures and technological processes

The course is taught in English. Aim of the course (1st semester, 1st year Master’s Degree in Nanotechnologies for ICTs) is to provide the theoretical and the experimental tools concerning materials and characterization techniques involved in micro and nanotechnological processes. The role of this course is central for the development of the professional profile of a nanotechnology engineer, as it develops several skills required for learning the other courses in Master's Degree. The course is divided into two parts: in the first, the student learns the fundamental aspects of the physical and chemical properties of functional materials involved in micro and nanotechnological processes. In the second part, the student learns basic notions about the main characterization techniques dealing with materials (homogeneous and nanostructured) and synthesis processes.

Materials (3 credits) - Fundamentals of materials bonding and structure; materials properties inferred from chemical bonding; crystal defects. - Metals and Ceramics: Thermo-/Ferro-/Pyro-electrical properties, Piezoelectricity, Piezoresistivity - Materials for harsh environments - Shape memory materials - Nanostructured materials - Polymers Characterizations (5,5 credits) - Introduction to Materials Characterization: Composition, Structure and Morphology through fundamental interactions (photons-matter, electrons-matter, ions/particles-matter) - Optical microscopy (conventional [wide field], confocal/laser scanning) - Electron microscopies (SEM and TEM with Electron Probe Microanalysis) and e-beam lithography - Ionic microscopy (Focus Ion Beam) and related lithography - Optical Spectroscopy: Photodetectors/Optical Spectrometers, Reflectance/Transmittance spectroscopy, Photoluminescence spectroscopy, Raman spectroscopy - Auger spectroscopy - X-ray Photoelectron Spectroscopy - Secondary Ion Mass Spectrometry - Rutherford Backscattering Spectrometry and Electron Recoil Detection Analysis - X-ray and electron diffraction - Surface Extended X-ray Absorption Fine Structure Experimental Labs (1,5 credits) - Experimental demonstrations of synthesis and materials characterizations theoretically discussed during the lessons: i) optical spectroscopies (Raman and Photoluminescence), ii) technological processes in cleanroom, iii) synthesis of metal nanoparticles.

Modalita di esame: Prova scritta (in aula);
Exam: Written test;
... The exam concerns a written test dealing with open questions on the developed theory and the experiments performed within the laboratory demonstrations, with a scheduled time of 2 hours. Laptop, smarphones, book, pocket calculator, slides, notes are not allowed.

Selected chapters from the following texts: - Materials Science and Engineering: An Introduction, by William D. Callister, Ed. Wiley - Foundations of Materials Science and Engineering, by William F. Smith and Javad Hashem, Ed. McGraw-Hill - Solid State Chemistry and its Applications, by Anthony R. West, Ed. Wiley - Structural and chemical analysis of materials, by J. P. Eberhart, Ed. Wiley - Surfaces and interfaces of solid materials, by H. Luth, Ed. Springer - A guide to scanning microscope observation, by JEOL Inc. - Optical processes in semiconductors, by J. I. Pankove, Ed. Dover Publ. Inc. - Optical diagnostics for thin film processing, by I. P. Herman, Ed. Academic Press - Fundamentals of photonics, by B.E.A. Saleh and M. C. Teich, Ed. Wiley Learning material provided by teachers

The knowledge transmitted by the course to students involves: - Physical and chemical properties of functional materials involved in micro and nanotechnologies. - Characterization methods devoted to materials, micro/nanostructures and technological processes

The course is taught in English. Aim of the course (1st semester, 1st year Master’s Degree in Nanotechnologies for ICTs) is to provide the theoretical and the experimental tools concerning materials and characterization techniques involved in micro and nanotechnological processes. The role of this course is central for the development of the professional profile of a nanotechnology engineer, as it develops several skills required for learning the other courses in Master's Degree. The course is divided into two parts: in the first, the student learns the fundamental aspects of the physical and chemical properties of functional materials involved in micro and nanotechnological processes. In the second part, the student learns basic notions about the main characterization techniques dealing with materials (homogeneous and nanostructured) and synthesis processes.

Materials (3 credits) - Fundamentals of materials bonding and structure; materials properties inferred from chemical bonding; crystal defects. - Metals and Ceramics: Thermo-/Ferro-/Pyro-electrical properties, Piezoelectricity, Piezoresistivity - Materials for harsh environments - Shape memory materials - Nanostructured materials - Polymers Characterizations (2,5 credits) - Introduction to Materials Characterization: Composition, Structure and Morphology through fundamental interactions (photons-matter, electrons-matter, ions/particles-matter) - Optical microscopy (conventional [wide field], confocal/laser scanning) - Electron microscopies (SEM and TEM with Electron Probe Microanalysis) and e-beam lithography - Ionic microscopy (Focus Ion Beam) and related lithography - Optical Spectroscopy: Photodetectors/Optical Spectrometers, Reflectance/Transmittance spectroscopy, Photoluminescence spectroscopy, Raman spectroscopy Experimental Lab (0,5 credits) - Experimental demonstration of electron microscopies

Modalita di esame: Prova scritta (in aula);
Exam: Written test;
... The exam concerns a written test dealing with open questions on the developed theory and the experiments performed within the laboratory demonstrations, with a scheduled time of 2 hours. Laptop, smarphones, book, pocket calculator, slides, notes are not allowed.

Selected chapters from the following texts: - Materials Science and Engineering: An Introduction, by William D. Callister, Ed. Wiley - Foundations of Materials Science and Engineering, by William F. Smith and Javad Hashem, Ed. McGraw-Hill - Solid State Chemistry and its Applications, by Anthony R. West, Ed. Wiley - Structural and chemical analysis of materials, by J. P. Eberhart, Ed. Wiley - Surfaces and interfaces of solid materials, by H. Luth, Ed. Springer - A guide to scanning microscope observation, by JEOL Inc. - Optical processes in semiconductors, by J. I. Pankove, Ed. Dover Publ. Inc. - Optical diagnostics for thin film processing, by I. P. Herman, Ed. Academic Press - Fundamentals of photonics, by B.E.A. Saleh and M. C. Teich, Ed. Wiley Learning material provided by teachers

As the outcome of the course, students will be able to - Analyze the behavior of the micro- and nano- scale devices, including the related problematic linked to geometric scaling and technology fabrication issues - Identify the correct models for representation of the electron device behavior, both through analytic/compact models anfd through technology CAD software (Synopsys Sentaurus). - Include the main non-ideality effects into the models (high field, multi-dimensionality, quantum effects, quantum confinement), and link their solution to the main developments of the fabrication technology. - Identify the correct modeling approach for the nano-scale devices - Orient their knowledge and future work within the scenario of the nanoelectronic device research field, with solid background on the problems that still need for solution, the future needs and expected developments both at the technology level and in the area of advanced modeling.

The course is taught in English. The course aims at providing a solid knowledge on the operation of the main semiconductor devices for the micro and nanoelectronics applications. The first part of the course is dedicated to the evolution of the MOS transistor technology, with emphasis on the CMOS applications. The FinFET transistor is addressed both from the technological and the modeling standpoint. The second part of the course is dedicated to emerging nanoelectronic devices, with particular emphasis on CMOS replacement and novel memory/storage devices, including the junctionless transistors, the tunneling transistors and lower dimensionality structures. The course provides the fundamentals for understanding the devices operation, starting from their physical structure and using the concepts of the semiconductor physics. The devices are analyzed at all levels, starting from the fabrication process, the modeling and simulation through CAD tools, highlighting the problems related to non-idealities and scaling issues.

• Technology roadmaop and physical limitations of miniaturization. Scenario of the micro- an nano-electronics. (0.45 credits). - Advanced modelling for the MOS transistor. (0.9 credits) - Submicron MOSFET: scaling and nonidealities issues (0.9 credits) - FinFETs (0.6 credits) - Junctionless, Tunneling and Negative Capacitance transistors (0.6 credits) - Emerging technologies (0.6 credits) - Assisted laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices. (1.95 credits)

Modalita di esame: Prova orale obbligatoria; Elaborato progettuale in gruppo;
Exam: Compulsory oral exam; Group project;
... The final exam consists of an oral exam (30 min.) and a laboratory test (15 min.). The oral exam aims at assessing the knowledge of the theoretical part whereas the laboratory test is aimed at assessing the capability gained in the numerical simulation of advanced electron devices. The Lab test includes always the discussion of the laboratory reports prepared in groups. The oral exam vote is up to 25. The lab vote, up to 5 points, summarizes the evaluation of the written laboratory reports (group-wise) and the individual lab exam. The exam is passed only if both the oral and lab parts are sufficient.

Reference textbook: Yuan Taur, Tak H. Ning Fundamentals of modern VLSI devices Cambridge University Press 2nd edition Teaching material from the professor: - Review of the semiconductor physics required as the background knowledge for this course (self-learning) - Course slides - Guidelines for the lab work -Further material for advanced topics

The student is expected to acquire knowledge in: - from fundamental principles of optics up to advanced modern aspects - the student will learn the relationship between the optics based on Maxwell waves and geometrcal optics based on Iconal equation approach. In particular this will be applied to optical instrumens as the optical microscopes - the diffraction theory will be fully developed on mathemathical ground and will be used for several filed of optics, from diffraction limit of optical instruments up to image formation. - the student will learn concept and mathematical tools for understanding several aspects of interference and coherence - the student will learn the optics in the matter for both dielectric and conductive material. - the student will learn the Fourier optics and the application to image formation and spatial optica filtering - the student will acquire the ability to design optical systems for specific imaging purposes and will learn how to evaluate the image quality in real space and in the Fourier space

This course aims to provide the mathematical and conceptual tools for understanding modern optics, in the framework of optical imaging systems. Specifically, the theoretical foundations of physical optics will be introduced, together with a number of applications relevant in the field of nano-bioscience. Starting from the classical description of electromagnetic wave propagation, the geometrical and physical optics approximations will be introduced, while discussing their applicability limits. Image formation is addressed for both scalar and fully vectorial electromagnetic fields, by mean of a Fourier Transformation formalism. The image formation mechanism is explained through the concepts of spatial resolution, point spread function and transfer function of optical elements, for both coherent and incoherent illumination. As application examples, the wide-field microscope and the scanning confocal microscope will be considered, wherein aberrations and image distortion (chromatic aberrations, vignetting, coma, spherical aberration, etc.) are treated mathematically. More advanced microscopy techniques based on the use fluorescent probes will be also described. In the second part of the course, the principles of temporal and spatial coherence of electromagnetic radiation will be addressed, with particular attention to the relationships between extended sources and spatial coherence (Van Cittert-Zernike theorem), spectral distribution and temporal coherence (Weiner-Khinchin theorem). Interferometric approaches to optical imaging will be introduced based on speckle analysis and wavefront analysis.

• Brief summary of classical electromagnetism and wave propagation - Geometrical and physical Optics - Antenna theory examples - Mathematical description of image formation theory, Fourier optics - Optical wide-field microscopy and scanning confocal microscopy - Advanced fluorescence microscopy techniques - Optics in solids - Aspects of theory of Cherence - Interference and diffraction - Control and manipulation of wave fronts: wavefront analysers, spatial light modulator devices - Diffractive optics with examples to optical tweezers

Modalita di esame: Prova scritta (in aula); Prova orale facoltativa;
Exam: Written test; Optional oral exam;
... The exam includes a written and an oral discussion if required by the student. The written part consists of : a) exercice and symbolic or numeric examples of the concepts explained in the course; b) multiple-answer questions; c) 2 topical themes to be extensively discussed. The total allotted time is 2 hrs. A total score of at least 18/30 is required to access to the oral examination, which will last 20-30 mins on average.

Fowels, Introduction to Modern Optics J.W. Goodman, Introduction to Fourier Optics J.W. Goodman, Statistical Optics Engineering Optics K. Iizuka Third edition , Springer series in Optica sciences B.E.A. Saleh and M.C. Teich, Fundamental of Photonics Additional supporting material provided during the course

The student will gain the following knowledge about: - new concepts on materials properties at micro/nano-scale - design of micro/nano-biosystems - fundamentals of artificial synapses - fundamentals of micro/nano-fludics - fundamentals of micro/nano-mechanics - biomedical applications (diagnostics) of M/NEMS and LOC The student will gain the following skills: - ability to understand and identify the key properties of micro/nano-scale materials and devices - ability to exploit micro/nano-scale phenomena - ability to exploit nanobiosystems for biomedical applications (diagnostics)

Biology and medicine are probably the principal application fields of nanotechnologies. On the other hand, more and more micro/nanosystems are bio-inspired, i.e. they are developed thanks to design rules taken from nature. In this context, the term nanobiosystem can refer to very different devices and applications dealing with nanoscale phenomena coupled with biological units (biomolecules, cells, ...). Examples are: lab-on-chip (LOC), artifical synapses, nanobiosensors, theranostic nanoparticles, DNA nanomachines, etc... The course, on the second semester of the first year of Master of Science in Nanotechnologies For ICTs, deals with the scaling at micro and nanosize of main physical phenomena involved in biomedicine. The student will gain the ability to comprehend how a nanosystem can link to biological functions, thus being able to design a nanobiosystem. The course is entirely taught in English.

The course is divided in four parts: I. Scaling of classical physics; quantum effects in nanoparticles and resistive switching devices (1,5 cfu) II. Fundamentals of micro/nano-fluidics (1,5 cfu) III. Fundamentals of micro/nano-mechanics (1 cfu) IV. Sensor science and case studies of nanobiosystems for diagnostics (2 cfu)

Modalita di esame: Prova scritta (in aula); Prova orale facoltativa; Elaborato scritto prodotto in gruppo;
Exam: Written test; Optional oral exam; Group essay;
... Final exam is composed by: - a written exam of 90 minutes with definitions, demonstrations and open questions on issues discussed during the course; any use of educational material (books, notes, slides, etc.) is interdicted - an optional oral presentation on close examination of a topic suggested by the teacher or a detailed report with data analysis on the lab experience (up to 3 added points). The written test is mandatory, it is passed with a score of at least 18/30 and the maximum mark is 30/30. The exam aims to test the student ability to understand and revise the topics covered in class lectures.

Reading materials comprehend the slides uploaded by the teacher on the website (“portale della didattica�), as well as supporting papers uploaded on the same site. Demonstration are made on the blackboard, with reference to the following books: Senturia, Microsystem Design, Kluwer Tabeling, Introduction to Microfluidics, Oxford Press Colin, Microfluidics, Wiley Schmid, Villanueva, Roukes, Fundamentals of Nanomechanical Resonators, Springer

Expected knowledge: • development of knowledge that extends and/or reinforces the ones received from preparatory courses and allow to mature and/or apply original ideas and design methods to the development of a new technological process flow for the production of integrated circuits and microsystems; • knowledge of the physical-chemical behaviour of materials to be used in micro and nanotechnologies. • knowledge of the basic technologies for microstructures fabrication. • knowledge of materials and technologies for Microsystems and MEMS fabrication. • knowledge of techniques and issues related to the fabrication and verification of nanosystems. Expected competences and skills • ability to identify and select the most suited and to apply materials and technologies for the fabrication of microstructures and microsystems. • ability to apply the acquired knowledge in a research and/or industrial framework, applying capability and skills in solving problems related to the design, simulation and implementation of microelectronic circuits and microsystems also in the case of new or unfamiliar issues or entered into broader and more interdisciplinary application contexts than the pure engineering sector (medicine, environmental monitoring, food, ...); • ability to integrate technical knowledge and to manage the complexity of the design and manufacturing process flow, to evaluate the quality and robustness of a process flow, its implementation and feasibility, choosing the most efficient solutions from the available options; • ability to communicate in a clear and unambiguous way technical aspects related to the design and manufacture of integrated circuits and microsystems, both in writing and oral form and to both specialists and non-specialists; • development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies and fabrication techniques for integrated circuits and microsystems, not necessarily explained and described during the course.

The deepening on technologies at the micro and nano-scale is the basis for the design and manufacture of microelectronic devices, microsensors, microfluidics and for the conception of new nanostructured devices. Technological processes therefore represent a fundamental know-how for both the electronic and the nanotechnology engineer. In this framework, the "Physics of technological process" course provides the theoretical foundation to be exploited in the study of materials, technologies and design for the manufacturing of microelectronic devices, micro and nanostructures, microsystems and MEMS/NEMS (micro/nano-electro-mechanical systems), with particular emphasis on applications in the ICT area. To this aim, particular emphasis will be devoted to provide a comprehensive overview of full process flows and to provide the student with the minimal tools to allow him evaluating different materials and different technological processes so as to select the best suited combination for different devices and applications. This course plays a central role in the development of an Engineer expert in micro and nanotechnologies, since it extensively provides the basic elements for the fabrication and design of the above mentioned devices and it is preparatory for the understanding of subsequent courses of the Master Degree. In the course the fundamentals of technological processes and materials for microelectronics and microsystems and some examples of the same are treated and discussed, thus making the course specifically addressed to those students interested in the fabrication and design aspects of micro and nano-scale devices.

Integrated Circuits technologies (wafer preparation, cleanroom technology, silicon oxidation, epitaxy, CVD, evaporation, sputtering, electroplating, diffusion, ion implantation) (2 ECTS) Lithographic techniques, wet etching, dry etching, back-end technologies, CMOS process flow (2 ECTS) Introduction to MEMS and NEMS, bulk micromachining, surface micromachining, LIGA, wafer bonding, MEMS packaging, MEMS complementary technologies (2 ECTS). No distinction to be reported for the content of the course according to the fact that it will be carried out in presence or remotely.

Modalita di esame: Prova scritta (in aula);
Exam: Written test;
... Expected learning outcomes Understanding of the covered topics and ability to grasp the fundamental aspects of the various technologies and related materials. Ability to compare (advantages/disadvantages) the different technological tools for the manufacture of a device. Ability to compare, identify and logically use the best technological tools in order to optimize the manufacturing process of a device. Ability to build a logical path by assembling the various technological processes, for the construction of a micro and nano-scale device. Criteria, rules and procedures for the examination The exam is aimed at ascertaining the knowledge of the topics listed in the official program of the course and the ability to apply the theoretical contents for the solution of simple exercises for the assembly of technological processes. The exam involves a written proof including both multiple-answer questions and open questions and short exercises. The total allotted time is 60 mins. No books, notes or any other didactic material is allowed. No negative points for the wrong multiple-answer questions, while missing answers will be considered as "0 points" on the cumulative result of the final mark. The assessments are expressed in thirtieths and the exam is passed if the mark is at least 18/30. The maximum achievable mark is 30 cum laude. The type of proposed questions aims to test the student ability to understand and revision the topics covered in class lectures, with particular reference to the ability to compare similar technologies, compare results or processing parameters of technological processes or performance of different materials. The main evaluation criteria of the exam consist in the correctness of the tests solutions, the completeness and synthesis of the responses to the open questions and the correctness of the employed technical language. The exam results are communicated directly to students at the end of the written exam revision by the teacher.

The didactic material (slides for the lectures) will be distributed in pdf format by the teacher and uploaded on the Didactic Portal before the course start. All the lectures will be moreover available as recorded videos form previous academic years on the Didactic Portal. Suggested but not mandatory additive readings and books will be specified by the teacher. Among them: - “Microsystem Technology�, W. Menz, J. Mohr, O.Paul, Wiley-VCH ed.

Physics of technological processes/Design of microsystems (Design of microsystems)- Use of CAD tools for MEMS modeling, analysis and optimisation; - MEMS design basics and methodologies; - Professional approach to the design of MEMS-based applications; - Development of knowledge over different physical domains, other then electrical one (as mechanical, thermal, magnetic, optic, fluidic, ...) and in particular the skill of connecting them together for implementing transduction systems (sensors and actuators for example), and then interfacing and integrating the different parts; - Ability to apply the knowledge gained in a research and/or industrial framework, understanding capability and skills in solving problems related to the design, simulation and implementation of microsystems also applied to new or unfamiliar issues or entered into application contexts broader and more interdisciplinary than the engineering sector (medicine, environmental monitoring, food, ...); - Ability to integrate technical knowledge and to manage the complexity of MEMS design, evaluating its quality and robustness, its implementation and feasibility, choosing the most efficient solutions from the available options; - Ability to communicate in a clear and unambiguous way technical aspects relating to the design of microsystems, both in writing and oral form and to both specialists and non-specialists; - Development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies for microsystems, not necessarily explained and described during the course. Physics of technological processes/Design of microsystems (Physics of technological process)Expected knowledge: • development of knowledge that extends and/or reinforces the ones received from preparatory courses and allow to develop and/or apply original ideas and design methods and the development of a technological process flow for the production of integrated circuits and microsystems; • ability to apply the knowledge gained in a research and/or industrial framework, understanding capability and skills in solving problems related to the design, simulation and implementation of microelectronic circuits and microsystems also applied to new or unfamiliar issues or entered into application contexts broader and more interdisciplinary than the engineering sector (medicine, environmental monitoring, food, ...); • ability to integrate technical knowledge and to manage the complexity of the design and manufacturing process flow, to evaluate the quality and robustness of a process flow, its implementation and feasibility, choosing the most efficient solutions from the available options; • ability to communicate in a clear and unambiguous way technical aspects relating to the design and manufacture of integrated circuits and microsystems, both in writing and oral form and to both specialists and non-specialists; • development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies and fabrication techniques for integrated circuits and microsystems, not necessarily explained and described during the course. Expected skills • Knowledge of the physical-chemical behaviour of materials to be used in micro and nanotechnologies. • Knowledge of the basic technologies for microstructure realization. • Knowledge of materials and technologies for Microsystems and MEMS realization. • Ability to apply materials and technologies for realization of microstructure and microsystems. • Knowledge of techniques and issues related to the fabrication and verification of nanosystems.

Physics of technological processes/Design of microsystems (Design of microsystems)This course aims to give to students an introduction to the Design of Microsystems. A particular focus is given to the use of CAD tools, for the simulation of micro and nanosystems, targeting the design of optimised devices. Starting from basic concepts about microsystems and their multi-physical modeling, the course develops both behavioral modeling and the Finite Element description of structural and functional parts (FEM, Finite Element Modeling) of a microsystem. For both modeling approaches the main CAD tools available are described and used (Matlab/Simulink for behavioral, Comsol for FEM modeling), extracting the relevant project parameters, first for analysis and optimisation, then for system synthesis and integration. An overview of examples of the main applications of micro and nanodevices is given, and a project methodology capable of operating on different domains is taught. Teaching is mainly addressed to students interested in the aspects of design and implementation of micro and nano-scale devices.Physics of technological processes/Design of microsystems (Physics of technological process)The course is taught in English. Aim of the course (1st semester, 1st year of the International LM in Nanotechnologies for ICT) is to provide the theoretical basics to be exploited in the study of materials, technologies and design for realization of microelectronic devices, micro and nanostructures, microsystems and MEMS/NEMS (micro/nano-electro-mechanical systems), with particular emphasis on applications in the ICT area. This course plays a central role in the development of an Engineer expert in micro an nanotechnologies, because it extensively provides the basic elements for the fabrication and design of the above mentioned devices and it is preparatory for the understanding of subsequent courses of the Laurea Magistrale. In the course the fundamentals of technologies and material for microelectronics and microsystems and some examples of the same are treated and discussed, thus making the course specifically addressed to those students interested in the fabrication and design aspects of micro and nano-scale devices.

Physics of technological processes/Design of microsystems (Design of microsystems)- Introduction to the modeling and the use of CAD for microsystems (1 ECTS); - Modeling and interaction between different physical domains (1 ECTS); - Finite Element Modeling, introduction to COMSOL (1 ECTS); - Guided Development in laboratory of some examples of microsystems (1 ECTS); - Self-Development and design of a microsystem, with related models and simulations (2 ECTS).Physics of technological processes/Design of microsystems (Physics of technological process)Integrated Circuits technologies (wafer preparation, cleanroom technology, silicon oxidation, epitaxy, CVD, evaporation, sputtering, electroplating, diffusion, ion implantation) (2 ECTS) Lithographic techniques, wet etching, dry etching, back-end technologies, CMOS process flow (2 ECTS) Introduction to MEMS and NEMS, bulk micromachining, surface micromachining, LIGA, wafer bonding, MEMS packaging, MEMS complementary technologies (2 ECTS)

Physics of technological processes/Design of microsystems (Design of microsystems)Modalita di esame: Prova scritta (in aula); Elaborato progettuale in gruppo; Physics of technological processes/Design of microsystems (Physics of technological process)Modalita di esame: Prova scritta (in aula);
Physics of technological processes/Design of microsystems (Design of microsystems)Exam: Written test; Group project; Physics of technological processes/Design of microsystems (Physics of technological process)Exam: Written test;
... Physics of technological processes/Design of microsystems (Design of microsystems)The assessment is organized with a mandatory written exam that gives a maximum mark of 30/30. The students (organized in groups of no more than 3 elements) can do a not mandatory project of a simple device, with simulations based on the tools learnt during the course, and produce a final written report. This work is evaluated and can give a maximum of 3 points, which are added to the written exam mark. If the final sum is larger than 30, the "cum laude" is assigned.Physics of technological processes/Design of microsystems (Physics of technological process)The exam involves a written proof including both multiple-answer questions and open questions and short exercises. The total allotted time is 60 mins. The type of proposed questions aims to test the student ability to understand and revision the topics covered in class lectures, with particular reference to the ability to compare similar technologies, compare results or processing parameters of technological processes or performance of different materials. The main evaluation criteria of the exam consist in the correctness of the tests solutions, the completeness and synthesis of the responses to the open questions and the correctness of the employed technical language.

Physics of technological processes/Design of microsystems (Design of microsystems)- Material (slides) provided by the Teacher ; - eLearning material based on two European projects: EduNano (http://edunano.eu). and NanoEl Asia (http://nanoel-asia.eu). Access credentials will be given during the course; - Stephen D. Senturia, "Microsystem Design", Kluwer Academic Publishers.Physics of technological processes/Design of microsystems (Physics of technological process)The didactic material (slides for the lectures) will be distributed by teachers. Suggested but not mandatory books will be specified by the teacher. Among them: - “Microsystem Technology�, W. Menz, J. Mohr, O.Paul, Wiley-VCH ed.

Solid state physics/Electronic devices (Electronic devices)- Knowledge of electronic and optical properties of semiconductors and nanostructures and of first order transport models. - Knowledge of the operating principles of semiconductor (opto)electronic devices - Ability to apply the basics of semiconductor physics to the understanding of electronic devices - Ability in understanding and interpreting important experimental characterization techniques of semiconductor electronic and optoelectronic devices - Ability to use physics-based models for the analysis and design of the main semiconductor (opto)electronic devices - Ability to derive and use circuit-based models for the analysis of the main semiconductor (opto)electronic devicesSolid state physics/Electronic devices (Solid state Physics)The students are expected to learn how to apply the principles of modern physics to study ad predict the physical properties of nanostructures. Main anticipated achievements are: - Knowledge of the properties of solid surfaces - Knowledge of electronic and optical properties of solids and nano-structures - Ability to evaluate the effect of confinements on the electronic motion in nanostructures - Ability to evaluate band structures, even in low-dimensional systems - Ability to apply the basics of solid state physics to the understanding of nanodevices - Ability to use physics-based models for the prediction of nanomaterials properties

Solid state physics/Electronic devices (Electronic devices)The course is taught in English. Aim of the Solid state physics/Electronic devices course is to provide the theoretical basics of solid state physics and their applications to solid state electronic devices, with particular emphasis in applications in the area of ICTs and energy. This course plays a central role in the development of an Engineer expert in Nanotechnologies, because it extensively provides the basic elements for the understanding of subsequent courses of the MSc learning program. In the Electronic Devices section, the students learn the basics for understanding the physics and the design of electronic and optoelectronic devices. The students are organized into two teams for the initial 3 ECTS (first module). The first team is composed of students with a limited background in the area of semiconductor devices, in particular junctions and MOSFETs, which have to be learned in order to understand further topics in (opto)electronic devices. The second team is composed of students with an adequate background of semiconductors and basic electronic devices. In both cases the students get (although with different levels of in-depth analysis) the fundamentals of semiconductor device physics, in particular semiclassical models for the analysis and design of (opto)electronic devices and their analytical approximations, functional to study more advanced topics and devices. The second part (3 ECTS, second module) is taught to all students, and covers electronic devices based on compound semiconductors and nanostructures.Solid state physics/Electronic devices (Solid state Physics)Aim of the Solid state physics/Electronic devices course is to provide the theoretical basics of solid state physics and their applications to solid state electronic devices, with particular emphasis in applications in the area of ICTs and energy. This course plays a central role in the development of an Engineer expert in Nanotechnologies, because it extensively provides the basic elements for the understanding of subsequent courses of the MSc learning program. The integrated course is divided in two modules. In the Solid State Physics module, the students are organized into two teams for the initial 4 ECTS. The first team is composed of students with a low background in the areas of quantum mechanics and statistics. The second team is composed of students with an adequate background of modern physics. In both cases the students will learn (up to different levels of in-depth analysis) the fundamentals of solid state physics functional to the study of the electronic properties of nanostructured materials. In the second part (2 ECTS) of the first section all students will learn theoretical methods for the prediction of the band structure of conducting/semiconducting solids and nanostructures.

Solid state physics/Electronic devices (Electronic devices)Team 1 Basics of semiconductors: electronic properties and transport (1 ECTS) p-n junction and MS junction (1 ECTS) MOS system and MOSFET transistor (1 ECTS) Team 2 Review on semiconductors out of equilibrium (0.75 ECTS) Metal Semiconductor junctions (0.6 ECTS) RG mechanisms and generalized junction law (0.75) Solar cells (0.9 ECTS) Team 1+ Team 2 Compound semiconductors, heterostructures and heterojunctions (0.6) MESFET and HEMT (1.2 ECTS) Homo- and Hetero-junction bipolar transistors (1.2 ECTS) Solid state physics/Electronic devices (Solid state Physics)Team 1 (4 ECTS) From classical physics to quantum mechanics (0,5 ECTS) Schrodinger equation. Measurement of a physical quantity. Indetermination principle (0,5 ECTS) Analysis of one-dimensional quantum problems, the Schroedinger's equation for an infinite array of potential wells, electrons in crystalline solids (1 ECTS) The gas of photons and phonons (the Bose-Einstein's distribution), the black-body problem, the electron gas (the Fermi-Dirac's distribution). (1 ECTS) Electronic properties of metals and semiconductors Photon-matter interaction (0,5 ECTS) Team 2 (4 ECTS) Surface and interface effects (1 ECTS) Heterojunctions, 2D electron gas and HEMT (1 ECTS) Low dimensionality systems (2 ECTS): quantum wells and quantum wires, the Landauer formula, tunneling through multiple barriers and resonant tunneling, Coulomb blockade, single-electron transistor, 2D materials. Team 1 and 2 (2 ECTS) Applications of quantum simulations to predict the band structures in solids (including low-dimensional systems) (2 ECTS)

Solid state physics/Electronic devices (Electronic devices)Modalita di esame: Prova scritta (in aula); Prova orale facoltativa; Elaborato progettuale in gruppo; Solid state physics/Electronic devices (Solid state Physics)Modalita di esame: Prova scritta (in aula);
Solid state physics/Electronic devices (Electronic devices)Exam: Written test; Optional oral exam; Group project; Solid state physics/Electronic devices (Solid state Physics)Exam: Written test;
... Solid state physics/Electronic devices (Electronic devices)The exam is written. It includes numerical exercises and open answer questions and it is aimed at assessing the student ability to analyze the operation of the devices presented during the course. The exam lasts 2 hours and students may use a summary of formulas (provided by the teachers with some possible addition by the students) and a scientific calculator. The written exam - if above threshold - may be complemented by an optional (on request of the student or of the teacher) oral exam. The oral exam is intended to assess the comprehension of the physics of semiconductors, with reference to the models taught in the course, and the operating principle of the devices described during lectures and numerical labs (see also Expected Learning Outcomes). In this case the final mark is given as arithmetic average of the written and oral parts. The maximum mark of written/oral scores 27 points. Students are requested to prepare (in team) a report on 2 numerical labs covering one topic of the first module and one topic of the second module. The reports are scored max 2 points each. These points are added to the written/oral assessment. Solid state physics/Electronic devices (Solid state Physics)The Solid State Physics exam consists of a written test aiming at addressing the degree of understanding achieved by the students on the subjects explained during the lectures (see expected learning outcome above). No supporting material is allowed during the exam. The exam aims at assessing the comprehension of the physics of the nanostructures addressed during the lectures and to discuss the application of these nanostructures in innovative electronic devices. When writing the exam sheet the student has to show that he/she is able to rigorously discuss and present the physical models used to describe nanostructure behaviour, highlighting the approximations behind each model. The written test includes multiple-answer questions and statements (to be assessed as true or false) and two open questions on all the course’s subjects. The maximum mark for questions/statements is 12/30, that of open questions is 16/30. The total allotted time is 75 min. The written test is passed with a score of at least 18/30. The individual laboratory report of each student will be graded with a mark in the range 0 to 3 points, this mark will be added to the score obtained in the written exam. The final score of the integrated course will be obtained by averaging the Solid State Physics score with the score obtained for Electrons Devices.

Solid state physics/Electronic devices (Electronic devices)For the basics topics: F. Bonani, G. Piccinini, Electronic Devices, CLUT, 2019 R.F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley For more advanced topics: J. Nelson, Physics of solar cells, Imperial College Press, 2003 S.M. Sze, K.K. Ng, Physics of semiconductor devices, Wiley, 2007 U. K. Mishra, J. Singh, Semiconductor Device Physics and Design Material distributed by teachers (slides, notes, homework solution) made available on the course websiteSolid state physics/Electronic devices (Solid state Physics)Team 1 P. Atkins "Molecular Quantum Mechanics" (Cambridge Univ. Press) H. Ibach and H. Luth "Solid-State Physics: An Introduction to Theory and Experiment" (Springer) N. W. Ashcroft ' N. D. Mermin, "Solid state physics" (Brooks Cole) C. Kittel "Introduction to Solid State Physics" (Wiley) Team 2 H. Luth "Solid Surfaces, Interfaces and Thin Films" (Springer) J. Davies "The physics of low-dimensional semiconductors" (Cambridge Univ. Press) Lectures notes produced by the teacher will be available on-line in the course web page.

1. Knowledge of the basics of statistical learning. 2. Knowledge of the theory and methods of classification for continuous and discrete data using maximum likelihood and Bayesian methods. 3. Knowledge of dimensionality reduction techniques and kernel methods. 4. Knowledge of neural networks: training/testing and applications. 5. Knowledge of tracking filters. 6. Ability to use Python programming frameworks, as well as the TensorFlow environment.

The medium of instruction is English. The course introduces statistical and machine learning methods for processing data and signals in order to extract information from them. Such methods are based on models that are typically learned from training data. In particular, the course covers statistical methods, where the data are modelled as a set of measured (or acquired) samples of a random process, and neural networks, where the model is a suitable combination of basic units (neurons) and the model parameters are found through numerical optimization. The first part of the course deals with statistical learning in maximum likelihood and Bayesian sense. The techniques presented during the course are applied to classification problems in several domains of ICT, including classification of continuous as well as discrete data, and dimensionality reduction using principal component analysis and kernel methods. In the second part of the course, feedforward and convolutional neural networks are introduced. Finally, statistical tracking filters are introduced. Throughout the course, the concepts above are illustrated with practical examples taken from ICT applications. A large part of the course takes place in the LAIB laboratories, where students implement and assess the methods discussed during the lectures. The lab activities are performed using the Python language, and possibly employing cloud-based environments such as Google CoLab. This course is designed jointly with the course “ICT for health�, with the objective to provide students with a coordinated “machine learning� approach that can be applied to several ICT problems; in particular, this course deals primarily with machine learning basics, classification and neural networks, while the “ICT for health� course addresses regression and clustering topics.

Discrete-time random signals and processes, probability distributions, model fitting (1.2CFU), including: • Introduction to machine learning; supervised vs. unsupervised learning, regression vs. classification, k-NN classifier, the curse of dimensionality, overfitting. • Review of probability, continuous vs. discrete random variables, Bayes’ rule, independence, common probability distributions, Gaussian multivariate distribution. Foundations of estimation theory (1.2CFU), including: • Maximum likelihood estimation • Bayesian and MAP estimation • Application to Gaussian processes Classification and latent linear models (0.6CFU), including: • Hypothesis testing • Bayesian decision theory and Bayesian classifiers • Performance assessment of classifiers • Principal component analysis and kernel methods Feedforward and convolutional deep neural networks (2.4CFU), including: • Perceptrons and architecture of a neural network • Backpropagation algorithm • Loss functions, overfitting and regularization • Convolutional networks and deep learning • Neural networks for classification, segmentation and object detection • Neural networks quantization • Transformers and generative adversarial networks Tracking filters (0.6CFU), including • Kalman filter

Modalita di esame: Prova orale obbligatoria;
Exam: Compulsory oral exam;
... The exam aims at assessing the knowledge and understanding of the topics described during the course, and the ability to critically discuss such topics. The exam is oral, and it may also use the report containing the description of the experiments carried out during the computer labs, including the obtained results. The exam typically starts from a discussion of one or more experiments done during the computer labs, and can extend to span the whole set of topics presented during the course. A lot of emphasis is given to the theory underlying each of the experiments. Possible topics addressed during the oral examination are: - a description of the considered system (or algorithm) and of its simulation model, - the theoretical background of the methods used in the Matlab-based experiments, - a discussion of the main parameters adopted in the experiments, - a clear presentation and discussion of the obtained results, - a discussion of the methods used to evaluate the performance of the algorithms, - a comparison with theoretical results (when applicable) The oral discussion is evaluated based on its correctness, the level of knowledge that the student has acquired on the topic, the ability to apply the acquired know-how, to clearly communicate the technical material with accurate terms and to correctly analyze, interpret, and comment the obtained results. During the oral examinations, the students may not consult any material,. The score of the oral examination is up to “30 e lode�, and the student passes the exam if they obtain at least 18/30.

The following texts will be used during the course: Regarding statistical models and machine learning, the reference book is: K.P. Murphy, “Machine learning – a probabilistic perspective�, MIT press, 2012. Regarding neural networks, there is no reference book.

Knowledge of the semiclassical models derived from Boltzmann transport equation for the physics-based simulation of semiconductor devices, of their different application domains, and of the numerical techniques involved in their implementation. Knowledge of the quantum transport models based on the non-equilibrium Green?s function (NEGF) formalism. Ability to implement a one-dimensional (1D) solver based on the finite-element method (FEM) for Poisson?s equation in semiconductor devices. Ability to use commercial CAD programs for the physics-based simulation of semiconductor (opto)electronic devices. Ability to implement a 1D FEM quantum transport simulation code based on NEGF.

Aim of the course is to discuss the techniques used for the numerical simulation of semiconductor materials and devices, and to teach the student both to use proficiently a commercial CAD suite and to write specialized device simulation codes - critical competences for engineers expert in (opto)electronic devices and nanotechnologies. The course presents the derivation, implementation and limitations of the most important semiclassical models of electron transport in semiconductors (drift-diffusion, energy balance, hydrodynamic), and provides an introduction to quantum transport models. Particular emphasis is placed on numerical laboratories.

1. Semiclassical models for carrier transport in semiconductors: from the Boltzmann transport equation (BTE) to the hydrodynamic, energy-transport and drift-diffusion models. Numerical issues and fundamental limitations in the simulation of (opto)electronic devices with semiclassical models based on systems of partial differential equations (1 ECTS) 2. Simulation of semiconductor devices at equilibrium: implementation of a 1D FEM solver for Poisson?s equation (1 ECTS) 3. Physics-based semiclassical simulation of (opto)electronic devices with commercial CAD suites (1.5 ECTS) 4. Introduction to quantum transport models. The NEGF formalism. Implementation of a 1D FEM quantum transport simulation code based on NEGF (2.5 ECTS)

Modalita di esame: Prova orale obbligatoria;
Exam: Compulsory oral exam;
... The individual oral examination (30 minutes) is focused on the reports of the numerical laboratories. The final grading takes into account the quality of the lab reports and the ability of the student to discuss the issues involved in each laboratory and her/his personal approach and contribution.

Detailed week-by-week syllabus, lecture notes, and laboratory/homework assignments will be posted on the course website. Supplementary texts include: D. Vasileska, S. M. Goodnick, and G. Klimeck, "Computational Electronics. Semiclassical and Quantum Device Modeling and Simulation", CRC Press 2010. M. Fischetti and W. G. Vandenberghe, "Advanced Physics of Electron Transport in Semiconductors and Nanostructures", Springer 2016.

• Knowledge of the physical behavior of surfaces at the nanoscale. - Knowledge of advanced techniques for the characterization of nanostructured surfaces and nano-dimensional systems. - Knowledge of advanced techniques for the modification of surfaces at nanoscale. - Knowledge of advanced techniques for the synthesis of nano-dimensional systems. - Ability to characterize surfaces and nanostructures at the nanoscale. - Ability to modify the physical properties of surfaces at the nanoscale. - Ability to synthesize nano-dimensional systems.

The course is taught in English. This course aims to provide the knowledge of the tools needed to study the properties of nano-structured surfaces and nano-dimensional systems, their advanced physical characterization, as well as their synthesis and the modification of their physical properties at the nanoscale. This course plays a central role in the development of an Engineer expert in nanotechnologies, since the ability to study, characterize and modify the properties of physical systems at the nanoscale are of paramount importance in all aspects nanotechnology applications. The course is divided in four parts. - In the first part, the most fundamental physical aspects of the interactions between nanostructured surfaces and the ambient are treated. - The second part is devoted to the study of advanced techniques for the physical characterization of nanostructured surfaces and nano-dimensional systems. - The third part is devoted to the study of advanced techniques for the modification of surfaces at the nanoscale and the synthesis of nano-dimensional systems. - The last part deals with the application of nanodimensional systems to some specific fields.

Physical properties of surfaces and nanostructures and their interactions with the ambient at the nanoscale. Techniques for the physical characterization of surfaces and nanostructures (Auger Spectroscopy, Xray Photoelectron Spectroscopy, Secondary Ion Mass Spectroscopy, Rutherford Back-Scattering, Elastic Recoil Detection Analysis, Xray Diffractometry, Low-Energy Electron Diffraction, Reflection High-Energy Electron Diffraction, Extended X-ray Absorption Fine Structure). Advanced techniques for the modification of surfaces at the nanoscale (thermal, laser-assisted, plasma-assisted, assisted by ion/electron beams). Advanced techniques for the synthesis of nano-dimensional systems and some examples of applications. Laboratory lessons - modification of surfaces at the nanoscale - morphological analysis of nanostructured surfaces and nanosystems - compositional analysis of nanostructured surfaces and nanosystems - analysis of the surface energy of nanostructured surfaces and nanosystems

Modalita di esame: Prova scritta (in aula); Prova orale facoltativa; Elaborato scritto prodotto in gruppo;
Exam: Written test; Optional oral exam; Group essay;
... The assessment criteria involve: - the student's knowledge of the main properties of nano-structured surfaces and nano- dimensional systems, of the main methods for nano-synthesis, surface modification and characterization; - the student's ability to describe, either in written or oral form, a method for the nano-synthesis, surface modification or characterization at the nanoscale, using the technical language correctly; - the student's ability to apply a method for the nano-synthesis, surface modification or characterization at the nanoscale in a laboratory environment. The exam involves a mandatory written part and an optional oral part. The written part consists of some questions concerning the topics discussed during the course. The total allotted time to answer the questions is 2 hr and a mark of 18/30 is required to pass the exam. It is not allowed to use any kind of didactic material (such as textbooks or notes) during the exam. The optional oral part consists in delivering an original student's presentation, of 15-20 min duration, which critically describes the content of a recent scientific paper related to one or more of the course topics. After the presentation, the student could be required to answer some questions related to the course topics. As a result of the of the oral exam evaluation, the written exam mark may be increased or reduced of maximum 3 points. Students who have attended at least 50% of the laboratory lessons may deliver to the teacher a report on the laboratory activities. The report must be original and must be delivered (by hand or by email) before the date of the first written exam. Its evaluation may increase the witten exam mark of 3 points at maximum .

• Teaching material distributed by the teachers. - H. Luth, "Solid Surfaces, Interfaces and Thin Films", Springer, 2010. - H. Busse and B.E. Koel, “Surface processes�, in: "Digital Encyclopedia of Applied Physics Condensed Matter F: Surfaces and Interfaces", Wiley, 2014. Other references will be communicated by the teacher during the lessons.

The student in this course will acquire: • A broad information on the optical properties of the main materials exploited in photonic devices: dielectrics, metals, semiconductors. To this aim, an extensive phenomenological treatment is provided on the Lorenz theory for the dielectric response, on the Drude theory of the metal response, and on the band-to-band interactions involved in the response of semiconductors (absorption, spontaneous emission, stimulated emission), including the qualitative behavior of quantum well structures and the related selection rules. An introductory reminder is also provided on the crystal and electronic properties of the relevant materials. • A detailed knowledge on the principles of operation of active photonic devices, including sources (LEDs, lasers), optical amplifiers (SOAs), electro-optic and electro-absorption modulators, receivers (pin and avalanche photodiodes). • A knowledge of the propagation properties of the main waveguiding structures (dielectric waveguides, plasmonic waveguides) and of the passive optical components (MMI components, coupled mode components). • A knowledge of the aspects related to the integration of optoelectronic devices (hybrid and monolithic). • The ability of evaluate the main properties of active and passive photonic devices through simplified analytical approaches • The ability of applying numerical techniques (e.g. the beam propagation method) to the analysis of complex propagating (active and passive) photonic structures.

The course is entirely taught in English. The goal of the course is the presentation of the major integrated photonic devices (semiconductor and passive ) together with their characteristics and methods and techniques used for their design and simulation .

• Introduction to the course. Materials for photonics: optical properties of metals, dielectrics, semiconductors (1 CFU) • Passive waveguiding structures: dielectric & plasmonic waveguides, MMI devices. Mode coupling, coupled mode components (1.5 CFU) • Detectors: pin, avalanche, structure of a photonic receiver (1 CFU)) • Modulators: electro-optic effect, electro-optic modulators, electro-absorption modulators (0.5 CFU) • The Beam Propagation Method and BPM lab (0.5 CFU) • LEDs, Semiconductor Optical Amplifiers and LASERs (1 CFU) • SOA/LASER numerical lab (0.5 CFU)

Modalita di esame: Prova scritta (in aula); Prova orale obbligatoria; Elaborato scritto prodotto in gruppo; Elaborato progettuale in gruppo;
Exam: Written test; Compulsory oral exam; Group essay; Group project;
... The examination in based on: 1. A written test on theory (2h), consisting in the written answer to a set of open questions; questions are taken verbatim from a set provided already from the beginning of the course in the web site. Questions are divided in groups (both in the set and in the examination) according to the main subjects of the course; typically, two questions per set are proposed; it is suggested to answer at least to a question per set. The theory test aims at assessing the knowledge of the subjects introduced in the course. During the written test, no written material is allowed. 2. One or more (typically two) CAD lab short reports where the student must apply the CAD tools introduced in the lab to a specific problem and discuss the results. 3. A homework, based on the solution of numerical problems (as discussed in the numerical classroom labs and as available in a solved problem set available from the course web site). The purpose of the homework is to test the students' ability to develop computations (often MATLAB or other computational tools are needed) on the basis of the theory. CAD labs and homeworks are group assignments (2-4 people), only exceptionally individual assignments are considered. Groups are typically organized in the second month of the course. 4. A short oral (20 m max) based on the discussion of the written part and if needed of the CAD reports / homeworks. The purpose of the oral is to test the student's ability to explain in a consistent way the subjects treated in the course; subject understanding in its general lines is more important than the knowledge of this or that formula. If some subject areas are missing in the written test the oral part will by trying to cover first those areas. The relative weight of items 1 and 4 is 4/6; the oral test can correct (+/-) the written score. The weight of item 2 and 3 is 1/6 each.

Lectures are covered by a set of powerpoint slides available from the course website. Part of the course subjects (optical properties of semiconductors, detectors, modulators) are covered in detail in: • G. Ghione, ‘Semiconductor devices for high-speed optoelectronics’, Cambridge 2009. Additional reference books are: • L.A.Coldren, S.W. Corzine 'Diode Lasers and Photonic integrated Circuits' Wiley 1995 (Chapters 3 - 6) • K.J. Ebeling, 'Integrated Opto-electronics', Springer-Verlag, 1993 (Chapters 5 and 6); • L.A. Coldren, S.W. Corzine 'Diode Lasers and Photonic integrated Circuits', Wiley 1995 (Chapters 3-6).

Technology for Nanoelectronic Systems & Nanoelectronic Systems (Nanoelectronic systems)The student has to develop knowledge that extends and/or reinforces the one from preparatory courses and allows developing/applying original ideas and methods to the design of nanocircuits and nanosystems: - Knowledge of the physical-chemical behaviour of part of the materials nanotechnologies. - Knowledge of the basic technologies for nanodevices fabrication. - Knowledge of models and methodologies used for the description and the design of nanosystems. - Knowledge of methods and CAD for nanosystems simulations and design. - Knowledge of methods for the integration of nanocircuits with microelectronic circuits. - Knowledge of techniques and issues related to the design, fabrication and verification of nanosystems. The student, after the course, should demonstrate the skills: - Ability to apply the gained knowledge in a research and/or industrial framework, understanding capability and skills in solving problems related to the design, modelling, simulation and implementation of nanosystems also applied to new technological principles or unfamiliar issues or entered into application contexts broader and more interdisciplinary than the engineering sector (medicine, environmental monitoring, food, ...); - Ability to design integration of nanosystems and its co-design with electronic circuits - Ability to apply technologies for the design of nanosystems. - Ability to integrate technical knowledge and to manage the complexity of the design, to evaluate the quality and robustness of a nanosystem, its implementation and feasibility, choosing the most efficient solutions from the available options; - Ability to communicate clearly and unambiguously technical aspects relating to the design and manufacture of integrated circuits at the nanoscale, both in writing and oral form and to both specialists and non-specialists; - Development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies for integrated nanosystems, not necessarily explained and described during the course.Technology for Nanoelectronic Systems & Nanoelectronic Systems (Technology for Nanoelectronic Systems)Expected knowledge: - Development of knowledge that extends and/or reinforces the ones received from preparatory courses and allow to develop and/or apply original ideas and design methods and the development of a technological process flow for the production of nano and microsystems; - Ability to apply the knowledge gained in a research and/or industrial framework, understanding capability and skills in solving problems related to the design, modeling, simulation and implementation of nano and microsystems also applied to new technological principles or unfamiliar issues or entered into application contexts broader and more interdisciplinary than the engineering sector (medicine, environmental monitoring, food, ...); - Ability to integrate technical knowledge and to manage the complexity of the design and manufacturing process flow, to evaluate the quality and robustness of a process flow, its implementation and feasibility, choosing the most efficient solutions from the available options; - Ability to communicate in a clear and unambiguous way technical aspects relating to the design and manufacture of nano and microsystems, both in writing and oral form and to both specialists and non-specialists; - Development of self-learning skills to allow the student to continue to learn autonomously new techniques and design methodologies and fabrication techniques for nano and micro and nano systems, not necessarily explained and described during the course. Expected skills - Knowledge of the physical-chemical behaviour of materials to be used in nanosystems. - Knowledge of the basic technologies for nanostructures fabrication. - Knowledge of materials and technologies for nano and microsystems. - Ability to apply materials and technologies for the fabrication of nanostructures and nanosystems. - Knowledge of models and methodologies used for the description and the design of nanosystems. - Knowledge of methods and CAD for nanosystems design and simulation. - Ability to design component for nano and microsystems. - Knowledge of techniques and issues related to the design, fabrication and verification of nanosystems. - Ability to co-design nanosystems and standard electronic circuits.

Technology for Nanoelectronic Systems & Nanoelectronic Systems (Nanoelectronic systems)The course aims to provide fundamental knowledge on the technologies and design for nanostructures and nanosystems, with particular emphasis on applications in the ICT area. This course plays a central role in the development of an Engineer expert in nanotechnologies because it extensively provides the basic elements for understanding how to study, understand and design a system based on emerging devices at the nanoscale either based on conventional or novel paradigms and how to connect them in more conventional microelectronics systems. Technology for Nanoelectronic Systems & Nanoelectronic Systems (Technology for Nanoelectronic Systems)The aim of the course is to provide the theoretical basics to study materials and technologies for the design and the fabrication of microelectronic devices, micro and nanostructures and microsystems, with particular emphasis on applications in the ICT area. The course is focused around three main topics advanced FET transistor (FinFET, Tunnel FET, Gate All Around FET), post-transistor emerging technologies (Molecular and Atomic Devices, Magnetic Memories and Logic Devices, Resistive Memories) and microsystems (MEMS). The course of Nanoelectronic Systems is focused on the description of these systems and how they work, while the course of Technology for Nanoelectronic Systems describe the fabrication process of such systems. This course plays a central role in the development of an Engineer expert in micro and nanotechnologies, because it extensively provides the basic elements for the fabrication and design of the above mentioned systems.

Technology for Nanoelectronic Systems & Nanoelectronic Systems (Nanoelectronic systems)- Methods for modelling nanodevices and nanocircuits for the hierarchical design of micro and nanosystems. - Simulation, methods for integration and test of nanosystems. - Molecular devices: molecular wires, molecular diodes, molecular transistors, molecular sensors. - Silicon-based nanowires and nanosensors. - Field-coupled nanodevices for computation based on molecules, nanomagnets, and single atoms. - Magnetic devices and systems for memory and computation. - Carbon Nano Tubes used as interconnects and Field Effect Transistors: technology, models, circuits and applications - Quantum computing and communication: technologies, models and deployment to circuitsTechnology for Nanoelectronic Systems & Nanoelectronic Systems (Technology for Nanoelectronic Systems)Technology for Nanoelectronic Systems --------------------------------------------------------- Technology for MOS systems: - Advanced MOS processes; - 3D integration technology; - Heterogeneous integration technology; - Simulation of process workflow for MOS systems. Technologies for nanosystems: - Atomic Layer Deposition; - Atomic Layer Etching; - Techniques for single atoms/molecules manipulation. - Self-Assembly techniques; - Nanoimprinting; - Resistive and 3D memories. Technology for microsystems Nanoelectronic Systems -----------------------------------

Technology for Nanoelectronic Systems & Nanoelectronic Systems (Nanoelectronic systems)Modalita di esame: Prova scritta (in aula); Prova orale obbligatoria; Elaborato progettuale in gruppo; Technology for Nanoelectronic Systems & Nanoelectronic Systems (Technology for Nanoelectronic Systems)Modalita di esame: Prova orale obbligatoria; Elaborato scritto prodotto in gruppo;
Technology for Nanoelectronic Systems & Nanoelectronic Systems (Nanoelectronic systems)Exam: Written test; Compulsory oral exam; Group project; Technology for Nanoelectronic Systems & Nanoelectronic Systems (Technology for Nanoelectronic Systems)Exam: Compulsory oral exam; Group essay;
... Technology for Nanoelectronic Systems & Nanoelectronic Systems (Nanoelectronic systems)The exam consists of three parts: - Written exam: The written exam will be on the more theoretical and design part and based on specific exercises on the various topics (30%). - Oral exam: The oral exam will be on the whole subject (30%). - Laboratory reports: The laboratories will require a report on each subject and will be evaluated for the final exam (40%). A final project is also available and it will be an extension of one of the laboratories with subjects proposed by the teacher to be elaborated and investigated (from 1 to 4 points to the final score). The project is not mandatory. Expected learning outcomes: Laboratory reports: - understanding the models of the analysed devices and the impact of parameters on the device behaviour - capability to use the simulation tools and the design tools and their optimization and relation to the device and circuit characteristics - skill in the design of small circuits based on the analyzed devices - capability in writing a correct, exhaustive, and clear technical report Written exam: - knowledge of the theoretical behaviour of the analysed devices and the systems - understanding of the impact of parameters and technology on the device behaviour - capability to apply the theoretical analysis to practical and numerical examples - knowledge of the technological processes impacting on the device electronics behaviour - capability to design small circuits based on the analyzed devices Oral exam: - knowledge of the characterised devices and circuits, technological and physical parameters, and analyzed fabrication processes - knowledge of the relations between theory and application for the analysed devices and circuits - capability to discuss the performance of devices and circuits Final Project: - skill in analyzing the behaviour of devices and/or circuits - capability to search and understand new aspects of the subjects analyzed during the course, eventually not covered during the lectures - autonomy in finding solutions to unexpected problems on devices and circuits, and with the adopted tools - creativity in the design and application of the device under analysis - capability to write a complete and extended technical report Exam rules - Laboratory reports: The reports are to be delivered within two weeks from the laboratory date, and are expected to be completed in terms of the answers to the asked questions and exercises. The report must be well presented and connected to the theory analyzed in the lectures; critical thinking will be especially evaluated. Lab reports are evaluated over a maximum score of 30 - Written exam: It consists of two/three open questions that might include also numerical exercise as a part to be completed and the time for the exam is two hours; no reading material or books are allowed; a maximum score of 30 is possible - Oral exam: the exam is based on three to five questions on the subjects covered in the course, and could also require applying and discussing the studied theory to practical new study cases. The oral consists of 15 minutes to prepare the answers to two questions and 30 minutes to present the answers and to discuss them at the board - Final Project: the project topic will be chosen from a list of possibilities, each related to one of the subjects analyzed in classes and labs; critical thinking is especially stimulated and in some cases could require learning and discovering new elements and tools; the project will be described with some progressive steps and the student can choose how many steps to take. The maximum evaluation is 30L and will be related to the number of steps, the degree of difficulty, the capability to apply the theory and to go in-depth with the analysis as well as the level of creativity and imagination involved. The project should be delivered by the end of the winter exam session. The project is not mandatory.Technology for Nanoelectronic Systems & Nanoelectronic Systems (Technology for Nanoelectronic Systems)The exam consists in two parts. 1) Laboratory reports: The laboratories will require a report on each subject and will be evaluated for the final exam (25%). 2) Oral exam: The oral exam will be on the whole subject (75%). Exam rules - Laboratory reports: A single report describing all the laboratories must be delivered before the end of January. For each of the four laboratories the report must describe the design of the device complete with all the choices done, how the device was implemented within the simulation environment and the results obtained. Laboatory reports are expected to be complete and well presented and connected to the theory analyzed in the lectures. Critical thinking will be especially evaluated. Laboratory reports are evaluated over a maximum score of 30 Lode. -Oral exam: the exam is based on three to six questions on the whole subject. During the oral exam the students will be evaluated based on the following objectives: - Knowledge of the structure and fabrication of advanced MOS devices; - Knowledge of fabrication processes for beyond CMOS systems; - Knowledge of MEMS technology for sensors; - Knowledge of fabrication processes simulations tools and activities carried on during the laboratories. The oral exam is evaluated over a maximum score of 30 Lode. The final mark will be calculated using a weighted sum of the laboratory and oral part.

Technology for Nanoelectronic Systems & Nanoelectronic Systems (Nanoelectronic systems)The material (slides, scientific papers, material for the lab execution, and lecture notes) will be available, and some books will be suggested for integration by the teacher. Books - Marc Baldo "Introduction to Nanoelectronics", - Supryio Datta "Lessons from Nanoelectronics" - Michael Petty "Molecular Electronics, from principle to practice", WhileyTechnology for Nanoelectronic Systems & Nanoelectronic Systems (Technology for Nanoelectronic Systems)Lectures notes will be provided to the students by the teachers as an integration to the lessons.

Modalita di esame: Accertamento (esame senza voto);
Exam: Check;
... The graduation grade for the Master's degree will be calculated starting from the average of the exams, to which a maximum of 8 additional points can be added. Points available to the Committee (maximum 6): - maximum 4 points for the Thesis; - maximum 2 points for the Thesis presentation. Points for the academic career (maximum 2): - max 1 point based on the number of honors (0.5 points for every 5 credits of exams with honors) - max 1 point based on the duration of the studies: * 1 point for graduating within the November/December session of the 2nd year of enrollment; * 0.5 points for graduating within the March/April session of the 3rd year of enrollment; * 0 points for graduating from the July session of the 3rd year. [Students with a path that requires an additional semester: 3rd year March/April and July - 1 point 3rd year October and November/December - 0.5 points Students with initial enrollment in March without advances ("anticipo crediti"): 3rd year March/April and July - 1 point 3rd year October and November/December - 0.5 points] If the final grade is equal to or greater than 112.51, the student will be awarded the maximum grade of 110 with honors (110 cum laude).

Modalita di esame: Accertamento (esame senza voto);
Exam: Check;
... The graduation grade for the Master's degree will be calculated starting from the average of the exams, to which a maximum of 8 additional points can be added. Points available to the Committee (maximum 6): - maximum 4 points for the Thesis; - maximum 2 points for the Thesis presentation. Points for the academic career (maximum 2): - max 1 point based on the number of honors (0.5 points for every 5 credits of exams with honors) - max 1 point based on the duration of the studies: * 1 point for graduating within the November/December session of the 2nd year of enrollment; * 0.5 points for graduating within the March/April session of the 3rd year of enrollment; * 0 points for graduating from the July session of the 3rd year. [Students with a path that requires an additional semester: 3rd year March/April and July - 1 point 3rd year October and November/December - 0.5 points Students with initial enrollment in March without advances ("anticipo crediti"): 3rd year March/April and July - 1 point 3rd year October and November/December - 0.5 points] If the final grade is equal to or greater than 112.51, the student will be awarded the maximum grade of 110 with honors (110 cum laude).

Modalita di esame: Accertamento (esame senza voto);
Exam: Check;
... The graduation grade for the Master's degree will be calculated starting from the average of the exams, to which a maximum of 8 additional points can be added. Points available to the Committee (maximum 6): - maximum 4 points for the Thesis; - maximum 2 points for the Thesis presentation. Points for the academic career (maximum 2): - max 1 point based on the number of honors (0.5 points for every 5 credits of exams with honors) - max 1 point based on the duration of the studies: * 1 point for graduating within the November/December session of the 2nd year of enrollment; * 0.5 points for graduating within the March/April session of the 3rd year of enrollment; * 0 points for graduating from the July session of the 3rd year. [Students with a path that requires an additional semester: 3rd year March/April and July - 1 point 3rd year October and November/December - 0.5 points Students with initial enrollment in March without advances ("anticipo crediti"): 3rd year March/April and July - 1 point 3rd year October and November/December - 0.5 points] If the final grade is equal to or greater than 112.51, the student will be awarded the maximum grade of 110 with honors (110 cum laude).

Il tirocinio ha come oggetto lo sviluppo di un'analisi, un progetto o un'applicazione a carattere innovativo, relativi ad argomenti coerenti con gli obiettivi formativi del corso di studi, e lo sviluppo di un elaborato scritto conclusivo (Tesi di Laurea). Gli insegnamenti del secondo anno sono distribuiti in modo da poter dedicare un adeguato periodo allo sviluppo del tirocinio. E' ammesso alla discussione finale lo studente che ha completato il restante percorso formativo. Le attività relative alla preparazione della Tesi di Laurea ed i relativi risultati devono essere presentati e discussi pubblicamente, in presenza di una commissione di docenti che esprime una valutazione del lavoro svolto e della presentazione. La tesi di Laurea e la presentazione devono essere in lingua inglese.

Modalita di esame: Accertamento (esame senza voto);
Exam: Check;
... The internship is intended as a curricular activity only as an integral part of the thesis. The activity to be carried out must be agreed with the referent of the course of study. It is possible to request, through the secretary's office, the variation of the career plan and the replacement of the 30 ECTS thesis with 12 CFU of internship and 18 CFU of thesis. This request is approved by the referent of the study course if agreed and considered appropriate with the training course.